Infineon Launches Industry’s Lowest On-Resistance 80 V MOSFET OptiMOS™ 7 for Automotive Applications

4月15日，英飞凌科技股份公司推出其最新先进功率MOSFET 技术—— OptiMOS™ 7 80 V的首款产品IAUCN08S7N013。该产品的特点包括功率密度显著提高，和采用通用且稳健的高电流SSO8 5 x 6 mm² SMD封装。这款OptiMOS™ 7 80 V产品非常适合即将推出的 48 V板网应用。它专为满足高要求汽车应用所需的高性能、高质量和稳健性而打造，包括电动汽车的汽车直流-直流转换器、48 V电机控制（例如电动助力转向系统（EPS））、48 V电池开关以及电动两轮车和三轮车等。

TDSON Automotive OptiMOS™ 7

Compared with the previous generation of products, the RDS(on) of Infineon's IAUCN08S7N013 has been reduced by more than 50%, with a maximum of no more than 1.3 mΩ, reaching the current leading level in the industry. The product has achieved smaller conduction losses, superior switching performance and higher power density in a 5 x 6 mm² package. In addition, the IAUCN08S7N013 also has the characteristics of low package resistance and inductance and strong avalanche current resistance. The semiconductor device has obtained AEC-Q101 certification for automotive applications.

The IAUCN08S7N013 is available in volume production now.