In the past, many designers have used rough assumptions to provide equivalent output capacitance values, as output capacitance is usually specified for a 25V drain-source voltage. However, the traditional equivalent output capacitance value is not very helpful in practical applications, as it varies with the drain-source voltage and does not provide accurate energy storage information during switch on/off. The newly defined output capacitance provides equivalent energy storage at the power converter operating voltage, enabling a more optimized power converter design.
Output Capacitor of ZVS Converter
In the soft switching topology, the energy stored in the inductor (leakage inductance and series inductance or magnetizing inductance in the transformer) is used to discharge the output capacitor of the switch tube to achieve zero voltage conduction through resonance. Therefore, the inductor must be designed accurately to prevent additional power consumption caused by hard switching. The following formula is the basic requirement for zero voltage switching.
Among them, Ceq is the switch equivalent output capacitance, and CTR is the transformer parasitic capacitance.
Where CS is the switch equivalent output capacitance.
Formula (1) is used for the phase-shifted full-bridge topology, and formula (2) is used for the LLC resonant half-bridge topology. In both formulas, the output capacitor plays an important role. If the output capacitor is assumed to be large in formula (1), the formula will result in a large inductance. Then, this large inductance will reduce the primary di/dt and reduce the effective duty cycle of the power converter. On the contrary, too small an output capacitor will result in a small inductance and harmful hard switching. In addition, too large an output capacitor in formula (2) will limit the magnetizing inductance and cause an increase in the circulating current. Therefore, for optimizing the soft-switching converter design, it is very critical to obtain an accurate value of the switching output capacitor. Usually, the traditional assumption for the equivalent output capacitance tends to use a larger value. Therefore, after selecting the inductor according to formula (1) or (2), the designer still needs to adjust the power converter parameters and go through multiple design iterations because each parameter is related to each other, such as the turns ratio, leakage inductance, and effective duty cycle. In addition, the output capacitance of the power MOSFET will follow the drain-source voltage. The output capacitor that provides equivalent energy storage at the operating voltage of the power converter is the best choice for these applications.
Energy storage from output capacitors
On the voltage vs. charge graph (Figure 1), the capacitance is the slope of the line, and the energy stored in the capacitance is the area under the line. Although the output capacitance of a power MOSFET is nonlinear and changes with the drain-source voltage, the energy stored in the output capacitance is still the area under the nonlinear capacitance line. Therefore, if we can find a straight line that gives the same area as the area contained by the changing output capacitance curve shown in Figure 1, then the slope of the line is exactly the equivalent output capacitance that produces the same energy storage.
Figure 1: Concept of equivalent output capacitance.
For some older planar technology MOSFETs, designers may use curve fitting to find the equivalent output capacitance.
Therefore, the energy storage can be obtained by a simple integration formula.
Finally, the effective output capacitance is:
Figure 2(a) shows the measured output capacitance and the fitted curve obtained by equation (3). However, for new superjunction MOSFETs with more nonlinear characteristics, a simple exponential curve fit is sometimes not good enough. Figure 2(b) shows the measured output capacitance of a state-of-the-art MOSFET and the fitted curve obtained by equation (3). The difference between the two in the high voltage region will lead to a huge difference in the equivalent output capacitance because the voltage and capacitance are multiplied in the integral formula. The estimate in Figure 2(b) will result in a much larger equivalent capacitance, which will mislead the initial design of the converter.
Figure 2: Output capacitance estimation: (a) old MOSFET, (b) new MOSFET.
If the output capacitance value as a function of the drain-source voltage is known, the output capacitance energy storage can be calculated using formula (4). Although the capacitance curve is shown in the data sheet, it is not easy to read the capacitance value accurately from the graph. Therefore, the output capacitance energy storage as a function of the drain-source voltage will be given by the graph in the latest power MOSFET data sheet. Using the curve shown in Figure 3, the equivalent output capacitance at the desired DC bus voltage can be obtained using formula (5).
Figure 3: Energy storage in the output capacitor.
Common Problems with Output Capacitors
In many cases, switching power supply designers question the MOSFET capacitance temperature coefficient because power MOSFETs usually operate at high temperatures. In general, it can be assumed that the MOSFET capacitance is always constant with temperature. The MOSFET capacitance is determined by the depletion length, doping concentration, channel width, and silicon dielectric constant, but all of these factors do not change much with temperature. Moreover, MOSFET switching characteristics such as switching losses or on/off transition speed do not change much with temperature because MOSFETs are majority carrier devices and their switching characteristics are mainly determined by their capacitance. When the temperature rises, the equivalent series gate resistance increases slightly. This slightly reduces the switching speed of the MOSFET at high temperatures. Figure 4 shows the capacitance variation with temperature. When the temperature changes by more than 150 degrees, the capacitance value does not change more than 1%.
Figure 4: MOSFET capacitance vs. temperature.
Another area of interest for designers is the test conditions for MOSFET capacitance. In most cases, the output capacitance is measured at 1MHz and Vgs = 0V. In reality, there is gate-drain capacitance, gate-source capacitance, and drain-source capacitance. But in practice, it is impossible to measure each capacitance separately. Therefore, the sum of gate-drain capacitance and drain-source capacitance is called output capacitance, which is measured by connecting the two capacitors in parallel. To connect them in parallel, the gate and source are shorted together, that is, Vgs = 0V. In switching applications, when the MOSFET is turned on by applying a bias voltage to the gate, the output capacitance is shorted through the MOSFET channel. Only when the MOSFET is turned off, the output capacitance value is worth considering. Regarding frequency, as shown in Figure 5, the output capacitance at low voltage increases slightly at low frequency. At low frequency, due to the limitations of the test equipment, it is sometimes impossible to measure the capacitance at low drain-source voltage. In Figure 5, when the drain-source voltage is less than 4V, the capacitance at 100kHz cannot be measured. Although there is a small change in output capacitance, the equivalent output capacitance is almost constant because a small change in output capacitance at low voltage does not have as big an effect on energy storage as shown in Figure 3.
Figure 5: MOSFET capacitance vs. frequency.
Conclusion
The output capacitor is an important part of the soft-switching converter design. Designers must carefully consider the equivalent capacitance value instead of fixing it to a single value at the drain-source voltage.
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