Introduction to semiconductor parameter tester, analysis of its characteristics and functions

Agilent 4155B is a new generation of precision semiconductor device parameter analyzer. It has the latest digital scanning parameter analyzer, reliable tester, powerful fault analysis tools, automatic inspection facilities; all integrated into the same instrument.

The new product is designed with the clear goal of providing unprecedented accuracy and functionality for sub-micron geometry device evaluation. It is a flexible instrument that will undoubtedly provide many applications for part inspection and field failure analysis at all stages, from material evaluation to characterization of device performance and final packaging, to improve the quality of semiconductor devices.

The right solution for your application The Agilent 4155B has four built-in source/monitor units (SMUs), two voltage units (VSUs), and two voltage monitor units (VMUs). For basic semiconductor connections with non-Kelvin connections, the 4155B is the best choice, with a resolution of 10fA/1μV and a measurement range of 100mA/100V.

At any time, you can add a 41501B SMU and pulse generator expander. It is fed by a 0V/1.6A ground unit and can be expanded to receive two 100mA/100V SMUs or a 1A/200V SMU and two synchronized 40V/1μs pulse generators. Setting and measuring Agilent 4155B can use many measurement units, including Agilent 41501B to make step, pulse sweep measurements, and sampling (time domain) measurements without changing connections.

Furthermore, stress cycle measurements can be made for reliability assessment, such as hot carrier injection and fast EEPROM evaluation. Settings and measurements can be made through the front panel keys, keyboard, or GPIB (SCPI commands) through the setup page and fill in the blanks. The button scan function can also be used to perform short measurements and search settings - similar to a curve tracer.

Display and Analysis The measurement and analysis results are displayed on a color LCD and can be stored in 4 graphic memories for analysis and comparison. Powerful analysis tools make it easy to extract various parameters such as hFE, Vth, etc. Once the parameter extraction conditions are found, they can be automatically obtained through the automatic analysis function.