Application of probes in dynamic parameter testing of power devices

Power device dynamic parameter test

Power devices such as field effect transistors and insulated gate bipolar transistors provide fast switching speeds and can withstand irregular voltage peaks. They are widely used in the design of power conversion products. In particular, the rapid development and application of third-generation semiconductors Sic and GaN have brought disruptive changes to the power industry. It also brings great testing challenges to design engineers. In the testing process of such products, we need to understand the dynamic characteristics of power devices. Probes play an indispensable role in such test systems.

For this type of solution, we recommend the use of ISOvU probes, which have a bandwidth of up to 800MHz and a common mode rejection ratio of up to 120dB, and can accurately test the actual situation of the driving signal.

Isolated Differential System Probe Parameter Table

Isolation probe physical picture

Appendix: Introduction to common parameters

1. Bandwidth, which represents the maximum signal frequency that the probe can measure

2. Common mode rejection ratio represents the ability of the probe to suppress common mode interference. The larger the ratio, the stronger the suppression ability.

3. Input capacitance represents the load effect of the probe on the system under test. The lower the input capacitance, the smaller the effect and the better the test effect.