3 billion yuan, another semiconductor IDM project started

Recently, Nanqiao District, Chuzhou City, Anhui Province held a concentrated start-up ceremony for major projects in October and a groundbreaking ceremony for the Huarui Micro Semiconductor IDM chip project.

According to the Nanqiao District Government, the Huarui Micro Semiconductor IDM chip project was built by Nanjing Huarui Micro Integrated Circuit Co., Ltd. with a total investment of 3 billion yuan. It is the first project settled in the Pukou-Nanqiao Cooperation Industrial Park. This also further strengthens the industrial cooperation between Nanjing Pukou and Chuzhou Nanqiao.

According to previous reports on Chuzhou.com, the project is mainly engaged in the research and development and production of semiconductor power devices. The total investment in the first phase of the project is 1 billion yuan, the land area is 100 acres, the construction period is 3 years, and a 6-inch power device wafer production line will be built. After full production, annual sales are expected to reach 1 billion yuan.

This settlement is an important breakthrough for Nanqiao Economic Development Zone in attracting investment in the Yangtze River Delta, and is a positive result achieved after Nanqiao Economic Development Zone reached a strategic cooperation agreement with Nanjing Jiangbei New District.

According to the information, Nanjing Huarui Micro Integrated Circuit Co., Ltd. was established in May 2018. It is a high-tech enterprise integrating power device product research and development, production, sales and service. Huarui Micro has successfully developed and mass-produced products including high-voltage VDMOS, low-voltage Trench MOS, super junction MOS and SGT MOS. At the same time, it is carrying out the research and development of third-generation semiconductor (SiC, GaN) power devices.