The STGAP series of isolated gate drivers features robust performance, simplified design, space saving and high reliability
STMicroelectronics (hereinafter referred to as ST) power MOSFET and IGBT gate drivers are designed to provide a perfect combination of robustness, reliability, system integration and flexibility. These drivers have integrated high-voltage half-bridges, single and multiple low-voltage gate drivers, and are well suited for a variety of applications. When it comes to ensuring safe control, the STGAP series of isolated gate drivers is the preferred solution, providing electrical isolation between the input section and the driven MOSFET or IGBT, ensuring seamless integration and high-quality performance.
Choosing the right gate driver is important for achieving optimal power conversion efficiency. With the widespread adoption of SiC technology, the need for reliable and safe control solutions is higher than ever, and ST's STGAP series of electrically isolated gate drivers is an indispensable part of this. The STGAP2SICS series is specifically optimized for safe control of SiC MOSFETs and can operate at high voltages up to 1200V, making it an excellent choice for energy-saving power systems, drives and controls. From industrial electric vehicle charging systems to solar, induction heating and automotive OBC DC-DC, the STGAP2SICS series simplifies design, saves space, and enhances robustness and reliability.
The STGAP2SICSA is an automotive AEC-Q100 compliant single-channel gate driver optimized for controlling SiC MOSFETs. It is available in space-saving narrow-body SO-8 packages (related model: STGAP2SICSAN) and wide-body SO-8W packages (related model: STGAP2SICSA), providing powerful performance through precise PWM control.
The STGAP2SICSA features electrical isolation between the gate drive channel and the low-voltage control and can operate at voltages up to 1700V (SO-8) and 1200V (SO-8W). Its input-to-output propagation time of less than 45ns ensures high PWM accuracy and enables reliable switching with a common-mode transient immunity (CMTI) of ±100V/ns. Built-in protection includes undervoltage lockout (UVLO) to prevent the SiC power switch from operating in inefficient or unsafe conditions, and thermal shutdown to regulate both driver outputs low if excessive junction temperature is detected.
The STGAP2SICSA has a single output configuration with Miller clamping. The single output enhances stability in high frequency hard switching applications, utilizing Miller clamping to prevent power switch oscillations.
The STGAP2SICSA logic input is as low as 3.3V and is compatible with TTL and CMOS logic, simplifying the connection to the host microcontroller or DSP. The driver can push and pull currents up to 4A at gate drive voltages up to 26V. A shutdown mode with a separate input pin helps minimize system power consumption.
Recently, ST announced a partnership with ZINSIGHT. ZINSIGHT is the only company in the world that has maturely mass-produced electric compressor controllers based on silicon carbide solutions on 400V, 800V, and 1000V platforms for new energy vehicles. ST's third-generation SiC MOSFET and isolated gate driver technology have been successfully applied in ZINSIGHT's first-class electric compressor solutions.
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