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STMicroelectronics dual-channel gate driver optimizes and simplifies SiC and IGBT switching circuits

Latest update time:2022-06-02 14:24
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February 15, 2022, China --- STMicroelectronics’ new dual-channel electrically isolated IGBT and silicon carbide (SiC) MOSFET gate drivers save space and simplify circuit design in high-voltage power conversion and industrial applications.


The IGBT driver STGAP2HD and SiC MOSFET driver STGAP2SICD use ST's latest electrical isolation technology and adopt SO-36W wide-body package to withstand 6kV transient voltage. In addition, ±100V/ns dv/dt transient tolerance prevents stray turn-on under high electrical noise conditions. Both drivers provide gate control signals up to 4A, and dual output pins bring more flexibility to gate drive, supporting separate adjustment of turn-on and turn-off times. The active Miller clamp function prevents gate voltage spikes during fast switching of half-bridge topology.
Circuit protection features include overtemperature protection, safe operation watchdog, and an undervoltage lockout (UVLO) mechanism for each channel to prevent the driver from starting in a dangerous inefficient mode. In accordance with the technical requirements of SiC MOSFETs, the STGAP2SICD increases the threshold voltage of the UVLO to optimize the energy efficiency of the transistor.


Each device has an iLOCK pin that enables both channels simultaneously in dual low-side asymmetric half-bridge applications and an interlock protection mechanism that prevents shoot-through current in traditional half-bridge circuits. Both drivers are rated for 1200V on the high-voltage rail, with 75ns input-to-output propagation time and high PWM control accuracy.

STMicroelectronics' new dual-channel galvanically isolated gate driver features dedicated shutdown and brake pins, as well as a standby power-saving pin, targeting applications including power supplies, motors, inverters, welding machines, and chargers. In addition, the input pins are compatible with TTL and CMOS logic signals down to 3.3V to simplify the connection of the driver to the host microcontroller or DSP processor.

The STGAP2HD and STGAP2SICD are in production now. The EVALSTGAP2HDM and EVALSTGAP2SICD demonstration boards are also available for quick evaluation of the driver characteristics when driving a half-bridge power stage.


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