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SemiPowerEx SiC Power Modules

Latest update time：2023-06-07
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“With the help of UnitedSiC FETs, we were able to develop SiC power modules optimized for power conversion systems. UnitedSiC FETs have higher gate-source threshold voltage, lower RDS(ON) and higher transconductance performance. We are also very grateful to the UnitedSiC engineering team for their excellent technical support. They performed performance tests on our power module samples in the lab and provided us with advice on the optimal value of the RC snubber, which helped us produce high-performance SiC power modules.”

——DKJang ​

SemiPowerEx CEO



Achieving stable signal control in modules using UnitedSiC cascode FETs


SemiPowerEx upgraded the existing modules using UnitedSiC cascode FET stacks (UF3SC065007, UF3SC120016 and UF3SC120009) and added a UnitedSiC recommended RC snubber circuit for stable signal control (the snubber is internal to the bolt-on terminal block).


SemiPowerEx Case Study Download

https://www.qorvo.com/resources/d/semipowerex-sic-power-modules


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