A Schottky barrier diode and a manufacturing method thereof. At present, due to the presence of table-type transistor etching and thick polysilicon layers, the miniaturization of chips cannot be promoted, and there is a distance between electrodes, which cannot improve the characteristics. In addition, the etching control of the Schottky junction part in its manufacturing method is very difficult. The present invention forms an action area by arranging n-type and n+ type ion implantation areas on the surface of the substrate, and it is no longer necessary to set up a table and a polysilicon layer, so that a planar Schottky barrier diode of a compound semiconductor can be realized. The cost of the chip can be reduced, and since the distance between the electrodes can be made close, the chip can be reduced, and the high-frequency characteristics can also be improved. Since GaAs is not etched when the Schottky electrode is formed, a Schottky barrier diode with good reproducibility can be manufactured.
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