MTK Platform RF Introduction MTK Platform RF Brief Introduction: Composition: PA: RF MICRO. DEVICES RF3146 antenna switch (duplexer): Triple-band: HITACHI 2MT43159R2-M090TK Transceiver (RF front end): MTK MT6129CPA Introduction: It is the third generation PowerStar power amplifier (PA) module produced by RFMD. It integrates the patented integrated power control technology of high power (GSM35dB, DCS and PCS 33dB), high efficiency (GSM 60%, DCS/PCS55%) RF power amplifier module, built-in directional coupler, detection diode, and dedicated power control integrated circuit (ASIC), suitable for GSM850, EGSM900, DCS, PCS frequency bands, and the output power control range reaches 50dB. Currently, it is widely used by Samsung mobile phones. It contains CMOS circuits and is an ESD sensitive device. Size 7X7X0.9mm. The following is a simplified block diagram: [pic] Main parameters: 1. Maximum output power 2. Total efficiency 3. Input power range (at full power output) 4. Second and third harmonics 5. Other non-harmonic spurious 6. Input and output impedance 7. Power control range 8. Forward isolation (at typical input power and transmission prohibited, or at minimum control power) Pin function description: |Pin number |Name |Function description||2 |VCC2GSM |Control voltage input of GSM driver stage, needs to be connected to VCCOUT and decoupled,|| | |Assigned to the power control part||6 |GSM850/900 OUT|GSM band RF output pin, matching and DC isolation circuit built-in, output impedance|| | |50 ohm...
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