Design and Development of AlGaN/GaN HEMT Power Amplifier Design of AlGaN/GaN HEMT Power Amplifier Lin Xigui, Hao Yue, Feng Qian, Zhang Jincheng (Institute of Microelectronics, Xidian University, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education, Xi\'an 710071, China) Abstract: When the small signal S parameters are not suitable for the design of microwave power amplifiers and the large signal S parameters are not easy to obtain, the AlGaN/GaN HEMT microwave power amplifier is successfully designed by using ADS software, load-pull method and input conjugate matching. In order to solve the problem of negative resistance at the transistor port, two methods, input and output parallel resistors and feedback network, are designed. Finally, the ideal results are obtained: the operation is absolutely stable, the bandwidth is 3.6 GHz ~ 8.0 GHz, and the maximum gain is 11. 0 4 d B , the maximum output power is 3 3 d B m , the maximum P A E reaches 2 9 . 2 %, and the voltage standing wave is relatively small. ign of AlGan/GaN HEMT Power Amplifier Lin Xi-gui,Hao Yue,FENG Qian,Zhang Jin-cheng ( Key Labor of Education for Wide gap Semiconductor ) Abstract: An AlGaN/GaN HEMT microwave amp…
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