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MPSA92RLRA

Description
Bipolar Transistors - BJT 500mA 300V PNP
CategoryDiscrete semiconductor    The transistor   
File Size98KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPSA92RLRA Overview

Bipolar Transistors - BJT 500mA 300V PNP

MPSA92RLRA Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
MPSA92, MPSA93
High Voltage Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MPSA93
MPSA92
Collector
−Base
Voltage
MPSA93
MPSA92
Emitter
−Base
Voltage
Collector Current
Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
−200
−300
−200
−300
−5.0
−500
625
5.0
1.5
12
−55
to
+150
Unit
Vdc
http://onsemi.com
V
CBO
Vdc
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
TO−92
(TO−226AA)
CASE 29−11
V
EBO
I
C
P
D
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
MPS
A9x
AYWWG
G
P
D
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
x
= 2 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
July, 2010
Rev. 6
1
Publication Order Number:
MPSA92/D

MPSA92RLRA Related Products

MPSA92RLRA MPSA92RL1
Description Bipolar Transistors - BJT 500mA 300V PNP Bipolar Transistors - BJT 500mA 300V PNP
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3
Manufacturer packaging code 29-11 CASE 29-11
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 300 V 300 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 240 240
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30
transistor applications AMPLIFIER SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
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