EGL34M datasheet, PDF - EEWORLD Datasheet

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EGL34M: Description0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA; Categorysemiconductor Discrete semiconductor; File Size199KB，2 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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EGL34M Overview

0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA

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MCC

Features

l

omponents

21201 Itasca Street Chatsworth

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EGL34A

THRU

EGL34M

0.5 Amp Super Fast

Recovery Rectifier

50 to 1000 Volts

MINIMELF

High Current Capability

Extremely Low Thermal Resistance

For Surface Mount Application

Higher Temp Soldering: 250 C for 10 Seconds At Terminals

Minimelf Package

o

Maximum Ratings

l

Operating Temperature: -55 C to +150 C

Storage Temperature: -55 C to +150 C

Maximum Thermal Resistance: 5 C/W Junction to Lead

o

MCC

Catalog

Number

EGL34A

EGL34B

EGL34D

EGL34G

EGL34J

EGL34K

EGL34M

Device

Marking

----

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

DC Blocking

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

50V

100V

200V

400V

600V

800V

1000V

DIM

A

B

C

MIN

.134

.008

.055

Cathode Mark

C

B

A

DIMENSION

INCHES

MAX

.142

.016

.059

MIN

3.40

0.20

1.40

MM

MAX

3.60

0.40

1.50

NOTE

Electrical Characteristics @ 25

o

C Unless Otherwise Specified

Average Forward Current

Peak Forward Surge

Current

Maximum Instantaneous

Forward Voltage

EGL34A-D

EGL34G

EGL34J-M

Maximum DC Reverse

Current At Rated DC

Blocking Voltage

Typical Junction

Capacitance

I

F(AV)

I

FSM

0.5A

10.0A

T

J

=75 C

8.3ms half sine

o

V

F

1.25

1.35

1.50

5.0uA

50uA

SUGGESTED SOLDER

PAD LAYOUT

I

FM

=0.5A

T

A

=25 C

T

J

=25 C

o

0.075”

0.105

o

I

R

C

J

T

J

=125

o

C

Measured at

7.0pF 1.0MHz,

V

R

=4.0V

0.030”

Maximum Reverse

Recovery Time

EGL34A-G

EGL34J-M

T

rr

50ns

75ns

I

F

=0.5A, I

R

=1.0A,

I

rr

=0.25A

www.mccsemi.com

EGL34M Related Products

	EGL34M	EGL34A	EGL34B	EGL34D	EGL34G	EGL34J	EGL34K
Description	0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA	0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA	0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA	0.5 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA	0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA	0.5 A, 600 V, SILICON, SIGNAL DIODE, DO-213AA	0.5 A, 800 V, SILICON, SIGNAL DIODE, DO-213AA

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