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EGL34G

Description
0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size199KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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EGL34G Overview

0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA

MCC
Features
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  omponents
21201 Itasca Street Chatsworth

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EGL34A
THRU
EGL34M
0.5 Amp Super Fast
Recovery Rectifier
50 to 1000 Volts
MINIMELF
High Current Capability
Extremely Low Thermal Resistance
For Surface Mount Application
Higher Temp Soldering: 250 C for 10 Seconds At Terminals
Minimelf Package
o
Maximum Ratings
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Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
Maximum Thermal Resistance: 5 C/W Junction to Lead
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MCC
Catalog
Number
EGL34A
EGL34B
EGL34D
EGL34G
EGL34J
EGL34K
EGL34M
Device
Marking
----
----
----
----
----
----
----
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
Maximum
DC Blocking
RMS
Voltage
Voltage
35V
70V
140V
280V
420V
560V
700V
50V
100V
200V
400V
600V
800V
1000V
DIM
A
B
C
MIN
.134
.008
.055
Cathode Mark
C
B
A
DIMENSION
INCHES
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Average Forward Current
Peak Forward Surge
Current
Maximum Instantaneous
Forward Voltage
EGL34A-D
EGL34G
EGL34J-M
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
0.5A
10.0A
T
J
=75 C
8.3ms half sine
o
V
F
1.25
1.35
1.50
5.0uA
50uA
SUGGESTED SOLDER
PAD LAYOUT
I
FM
=0.5A
T
A
=25 C
T
J
=25 C
o
0.075”
0.105
o
I
R
C
J
T
J
=125
o
C
Measured at
7.0pF 1.0MHz,
V
R
=4.0V
0.030”
Maximum Reverse
Recovery Time
EGL34A-G
EGL34J-M
T
rr
50ns
75ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
www.mccsemi.com

EGL34G Related Products

EGL34G EGL34A EGL34B EGL34M EGL34D EGL34J EGL34K
Description 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 600 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 800 V, SILICON, SIGNAL DIODE, DO-213AA

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