3N190-1 datasheet, PDF - EEWORLD Datasheet

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3N190-1: DescriptionP-channel dual mosfet enhancement mode; File Size141KB，2 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html

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3N190-1 Overview

P-channel dual mosfet enhancement mode

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3N190 3N191

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191

LOW GATE LEAKAGE CURRENT

LOW TRANSFER CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation One Side

Continuous Power Dissipation Both Sides

Maximum Current

Drain to Source

Maximum Voltages

Drain to Gate

Drain to Source

Gate to Gate

2,3

P-CHANNEL DUAL MOSFET

ENHANCEMENT MODE

GSS

≤

±10pA

rss

≤

1.0pF

TO-78

BOTTOM VIEW

-65 to +150 °C

-55 to +135 °C

300mW

525mW

50mA

30V

±125V

±80V

Transient Gate to Source

MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V

= 0V unless otherwise stated)

SYMBOL

fs1

fs2

CHARACTERISTIC

Forward Transconductance Ratio

Gate to Source Threshold Voltage

Differential

Gate to Source Threshold Voltage

Differential with Temperature

Gate to Source Threshold Voltage

Differential with Temperature

MIN

0.85

TYP

MAX UNITS

1.0

100

µV

CONDITIONS

= -15V, I

= -500µA,

= 1kHz

= -15V, I

= -500µA

= -15V, I

= -500µA

= -55 TO +25 °C

= -15V, I

= -500µA

= +25 TO +125 °C

GS1-2

∆V

GS1

−

∆T

∆V

GS1

−

∆T

100

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V

= 0V unless otherwise stated)

SYMBOL

DSS

SDS

GS(th)

GSSR

GSSF

DSS

SDS

D(on)

CHARACTERISTIC

Drain to Source Breakdown Voltage

Source to Drain Breakdown Voltage

Gate to Source Voltage

Gate to Source Threshold Voltage

Reverse Gate Leakage Current

Forward Gate Leakage Current

Drain Leakage Current "Off"

Source to Drain Leakage Current "Off"

Drain Current "On"

-5.0

MIN

-40

-3.0

-2.0

-6.5

-5.0

-10

-200

-400

-30.0

TYP

MAX UNITS

CONDITIONS

= -10µA

= -10µA, V

= 0V

= -15V, I

= -500µA

= V

, I

= -10µA

= -15V, I

= -500µA

= 40V

= -40V

= -15V

= -15V, V

= 0V

= -15V, V

= -10V

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

3N190-1 Related Products

	3N190-1	3N190	3N191
Description	P-channel dual mosfet enhancement mode	P-channel dual mosfet enhancement mode	P-channel dual mosfet enhancement mode
Is it lead-free?	-	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to
Maker	-	Linear ( ADI )	Linear ( ADI )
Parts packaging code	-	TO-78	TO-78
package instruction	-	CYLINDRICAL, O-MBCY-W7	CYLINDRICAL, O-MBCY-W7
Contacts	-	7	7
Reach Compliance Code	-	compliant	compliant
ECCN code	-	EAR99	EAR99
Other features	-	VERY HIGH INPUT IMPEDANCE	VERY HIGH INPUT IMPEDANCE
Configuration	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage	-	40 V	40 V
Maximum drain current (ID)	-	0.05 A	0.05 A
Maximum drain-source on-resistance	-	300 Ω	300 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	-	1 pF	1 pF
JEDEC-95 code	-	TO-78	TO-78
JESD-30 code	-	O-MBCY-W7	O-MBCY-W7
Number of components	-	2	2
Number of terminals	-	7	7
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	135 °C	135 °C
Package body material	-	METAL	METAL
Package shape	-	ROUND	ROUND
Package form	-	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	P-CHANNEL	P-CHANNEL
Certification status	-	Not Qualified	Not Qualified
surface mount	-	NO	NO
Terminal form	-	WIRE	WIRE
Terminal location	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	-	SILICON	SILICON

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