3N190 datasheet, PDF - EEWORLD Datasheet

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3N190: DescriptionP-channel dual mosfet enhancement mode; CategoryDiscrete semiconductor The transistor; File Size141KB，2 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html; Environmental Compliance

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3N190 Overview

P-channel dual mosfet enhancement mode

3N190 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Linear ( ADI )
Parts packaging code	TO-78
package instruction	CYLINDRICAL, O-MBCY-W7
Contacts	7
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	VERY HIGH INPUT IMPEDANCE
Configuration	SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1 pF
JEDEC-95 code	TO-78
JESD-30 code	O-MBCY-W7
Number of components	2
Number of terminals	7
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	135 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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3N190 3N191

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191

LOW GATE LEAKAGE CURRENT

LOW TRANSFER CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation One Side

Continuous Power Dissipation Both Sides

Maximum Current

Drain to Source

2

Maximum Voltages

Drain to Gate

2

Drain to Source

Gate to Gate

2

2,3

1

P-CHANNEL DUAL MOSFET

ENHANCEMENT MODE

I

GSS

≤

±10pA

C

rss

≤

1.0pF

TO-78

BOTTOM VIEW

C

-65 to +150 °C

-55 to +135 °C

300mW

525mW

50mA

30V

±125V

±80V

G1

S1

D1

2

4

3

5

6

1

7

G2

S2

D2

Transient Gate to Source

MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V

BS

= 0V unless otherwise stated)

SYMBOL

g

fs1

g

fs2

CHARACTERISTIC

Forward Transconductance Ratio

Gate to Source Threshold Voltage

Differential

Gate to Source Threshold Voltage

4

Differential with Temperature

Gate to Source Threshold Voltage

Differential with Temperature

4

MIN

0.85

TYP

MAX UNITS

1.0

100

µV

°

C

CONDITIONS

V

DS

= -15V, I

D

= -500µA,

f

= 1kHz

V

DS

= -15V, I

D

= -500µA

V

DS

= -15V, I

D

= -500µA

T

S

= -55 TO +25 °C

V

DS

= -15V, I

D

= -500µA

T

S

= +25 TO +125 °C

V

GS1-2

∆V

GS1

−

2

∆T

∆V

GS1

−

2

∆T

mV

100

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V

SB

= 0V unless otherwise stated)

SYMBOL

BV

DSS

BV

SDS

V

GS

V

GS(th)

I

GSSR

I

GSSF

I

DSS

I

SDS

I

D(on)

CHARACTERISTIC

Drain to Source Breakdown Voltage

Source to Drain Breakdown Voltage

Gate to Source Voltage

Gate to Source Threshold Voltage

Reverse Gate Leakage Current

Forward Gate Leakage Current

Drain Leakage Current "Off"

Source to Drain Leakage Current "Off"

Drain Current "On"

-5.0

MIN

-40

-3.0

-2.0

-6.5

-5.0

10

-10

-200

-400

-30.0

mA

pA

V

TYP

MAX UNITS

CONDITIONS

I

D

= -10µA

I

S

= -10µA, V

BD

= 0V

V

DS

= -15V, I

D

= -500µA

V

DS

= V

GS

, I

D

= -10µA

V

DS

= -15V, I

D

= -500µA

V

GS

= 40V

V

GS

= -40V

V

DS

= -15V

V

SD

= -15V, V

DB

= 0V

V

DS

= -15V, V

GS

= -10V

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

3N190 Related Products

	3N190	3N191	3N190-1
Description	P-channel dual mosfet enhancement mode	P-channel dual mosfet enhancement mode	P-channel dual mosfet enhancement mode
Is it lead-free?	Lead free	Lead free	-
Is it Rohs certified?	conform to	conform to	-
Maker	Linear ( ADI )	Linear ( ADI )	-
Parts packaging code	TO-78	TO-78	-
package instruction	CYLINDRICAL, O-MBCY-W7	CYLINDRICAL, O-MBCY-W7	-
Contacts	7	7	-
Reach Compliance Code	compliant	compliant	-
ECCN code	EAR99	EAR99	-
Other features	VERY HIGH INPUT IMPEDANCE	VERY HIGH INPUT IMPEDANCE	-
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-
Minimum drain-source breakdown voltage	40 V	40 V	-
Maximum drain current (ID)	0.05 A	0.05 A	-
Maximum drain-source on-resistance	300 Ω	300 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Maximum feedback capacitance (Crss)	1 pF	1 pF	-
JEDEC-95 code	TO-78	TO-78	-
JESD-30 code	O-MBCY-W7	O-MBCY-W7	-
Number of components	2	2	-
Number of terminals	7	7	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	135 °C	135 °C	-
Package body material	METAL	METAL	-
Package shape	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	P-CHANNEL	P-CHANNEL	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal form	WIRE	WIRE	-
Terminal location	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	-

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