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Datasheet> All Categories > Discrete semiconductor> The transistor> SST176
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SST176

Description
single P-channel jfet switch
CategoryDiscrete semiconductor    The transistor   
File Size125KB，2 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Environmental Compliance
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SST176 Overview

single P-channel jfet switch

SST176 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLinear ( ADI )
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain-source on-resistance250 Ω
FET technologyJUNCTION
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

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J/SST174 SERIES
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
V
GDS
= 30V
V
GSS
= 30V
I
G
= -50mA
350mW
-55 to 150°C
-55 to 135°C
D G S
1 2 3
SINGLE P-CHANNEL
JFET SWITCH
r
DS(on)
≤
85Ω
I
D(off)
= 10pA
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
D
S
1
3
2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(F)
I
GSS
I
G
I
D(off)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
MIN
30
-0.7
0.01
0.01
-0.01
-1
1
nA
TYP
MAX UNITS
V
CONDITIONS
I
G
= 1µA, V
DS
= 0V
I
G
= -1mA, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DG
= -15V, I
D
= -1mA
V
DS
= -15V, V
GS
= 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
GS(off)
I
DSS
r
DS(on)
CHARACTERISTIC
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Drain to Source
On Resistance
J/SST174
MIN
5
-20
MAX
10
-135
85
J/SST175
MIN
3
-7
MAX
6
-70
125
J/SST176
MIN
1
-2
MAX
4
-35
250
J/SST177
MIN
0.8
-1.5
MAX
2.25
-20
300
UNITS
V
mA
Ω
CONDITIONS
V
DS
= -15V, I
D
= -10nA
V
DS
= -15V, V
GS
= 0V
V
GS
= 0V, V
DS
= -0.1V
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

SST176 Related Products

SST176 SST174 SST175
Description single P-channel jfet switch single P-channel jfet switch single P-channel jfet switch
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Linear ( ADI ) Linear ( ADI ) Linear ( ADI )
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Maximum drain-source on-resistance 250 Ω 85 Ω 125 Ω
FET technology JUNCTION JUNCTION JUNCTION
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 135 °C 135 °C 135 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 0.36 W 0.36 W 0.36 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON

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