SST175 datasheet, PDF - EEWORLD Datasheet

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SST175: Descriptionsingle P-channel jfet switch; CategoryDiscrete semiconductor The transistor; File Size125KB，2 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html; Environmental Compliance

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SST175 Overview

single P-channel jfet switch

SST175 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Linear ( ADI )
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Maximum drain-source on-resistance	125 Ω
FET technology	JUNCTION
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	135 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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J/SST174 SERIES

Linear Integrated Systems

FEATURES

Direct Replacement For SILICONIX J/SST174 SERIES

LOW ON RESISTANCE

LOW GATE OPERATING CURRENT

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Currents

Gate Current

Maximum Voltages

Gate to Drain Voltage

Gate to Source Voltage

V

GDS

= 30V

V

GSS

= 30V

I

G

= -50mA

350mW

-55 to 150°C

-55 to 135°C

D G S

1 2 3

SINGLE P-CHANNEL

JFET SWITCH

r

DS(on)

≤

85Ω

I

D(off)

= 10pA

J SERIES

TO-92

BOTTOM VIEW

SST SERIES

SOT-23

TOP VIEW

D

S

1

3

2

G

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

BV

GSS

V

GS(F)

I

GSS

I

G

I

D(off)

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate Reverse Current

Gate Operating Current

Drain Cutoff Current

MIN

30

-0.7

0.01

-0.01

-1

1

nA

TYP

MAX UNITS

V

CONDITIONS

I

G

= 1µA, V

DS

= 0V

I

G

= -1mA, V

DS

= 0V

V

GS

= 20V, V

DS

= 0V

V

DG

= -15V, I

D

= -1mA

V

DS

= -15V, V

GS

= 10V

SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

V

GS(off)

I

DSS

r

DS(on)

CHARACTERISTIC

Gate to Source

Cutoff Voltage

Drain to Source

Saturation Current

Drain to Source

On Resistance

J/SST174

MIN

5

-20

MAX

10

-135

85

J/SST175

MIN

3

-7

MAX

6

-70

125

J/SST176

MIN

1

-2

MAX

4

-35

250

J/SST177

MIN

0.8

-1.5

MAX

2.25

-20

300

UNITS

V

mA

Ω

CONDITIONS

V

DS

= -15V, I

D

= -10nA

V

DS

= -15V, V

GS

= 0V

V

GS

= 0V, V

DS

= -0.1V

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

SST175 Related Products

	SST175	SST174	SST176
Description	single P-channel jfet switch	single P-channel jfet switch	single P-channel jfet switch
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Linear ( ADI )	Linear ( ADI )	Linear ( ADI )
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Maximum drain-source on-resistance	125 Ω	85 Ω	250 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	135 °C	135 °C	135 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.36 W	0.36 W	0.36 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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