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KBU8D

Description
silicon bridge rectifiers
File Size104KB,2 Pages
ManufacturerGalaxy ( Bel )
Websitehttp://www.galaxypwr.com
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KBU8D Overview

silicon bridge rectifiers

BL
GALAXY ELECTRICAL
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to
250
Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
.760(19.3)Max
.700(17.8)
.660(16.8)
.160(4.1)
.140(3.6)
KBU8A - - - KBU8M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 8.0A
KBU
.933(23.7)
.894(22.7)
.185(4.7)
.165(4.2)
.280(7.1)
.260(6.6)
45
0
.085(2.2)
.065(1.7)
+
+
_
~
.075(1.9)R.TYP.
(2 PLACES)
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
1.0(25.4)Min
~
+
.455(11.3)
.405(10.3)
.260(6.6)
.180(4.5)
.205(5.2)
.185(4.7)
.052(1.3)
.048(1.2)
.220(5.6)
.180(4.6)
Dimensions in inches and (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBU
8A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
A
=50
KBU
8B
100
70
100
KBU
8D
200
140
200
KBU
8G
400
280
400
8.0
KBU
8J
600
420
600
KBU
8K
800
560
800
KBU
8M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 4.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
250.0
A
V
F
I
R
T
J
T
STG
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287024
BL
GALAXY ELECTRICAL
1.

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