THN4201 Series
SOT 523
Unit in mm
NPN SiGe RF TRANSISTOR
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Gain
MAG = 10.5 dB Typ. @ f = 2 GHz, V
CE
= 3 V, I
C
= 20 mA
MAG = 8.5 dB Typ. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Transition Frequency
f
T
= 16.5 GHz Typ. @ V
CE
= 3 V, I
C
= 20 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
□
Available Package
Product
Package
SOT323
SOT343
SOT523
SOT623F
□
h
FE
Classification
Marking
h
FE
AG1
AG2
125 to 300 80 to 160
THN4201U
THN4201Z
THN4201E
THN4201KF
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
15
6
2.5
35
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/12 -
March-2006
Rev 1.0
THN4201 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
Value
Symbol
I
CBO
Collector Cut-off Current
I
CEO
I
EBO
h
FE
f
T
C
CB
|S
21
|
2
Parameter
Test Condition
V
CB
= 10 V, I
E
= 0 mA
V
CE
= 6 V, I
B
= 0 mA
Min.
-
-
-
80
-
-
7.5
6
8.5
8
-
-
-
-
-
-
Typ.
-
-
-
200
16.5
0.48
8.4
7.5
10.3
9.5
1.5
1.7
0.04
0.05
8
7
Max.
0.5
5
0.5
300
-
-
-
Unit
uA
uA
uA
Emitter Cut-off Current
DC Current Gain
Transition Frequency
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA
V
CE
= 3 V, I
C
= 20 mA
GHz
pF
dB
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
Insertion Power Gain
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Maximum Available Gain
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
-
-
dB
-
-
dB
-
-
Ω
-
-
dB
-
MAG
NFmin
Minimum Noise Figure
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
rn
Noise Resistance
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
G
A
Associated Gain
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
www.tachyonics.co.kr
- 2/12 -
March-2006
Rev 1.0
THN4201 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
24
22
20
20
18
16
|S
21
|
2
[dB]
18
MAG [dB]
16
14
12
10
8
6
0.0
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
14
12
10
8
6
4
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 1 V
I
C
= 10 mA
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
Frequency [GHz]
Frequency [GHz]
Maximum Available Gain, MAG vs. I
C
14
f = 2 GHz
12
V
CE
= 3 V
Insertion Power Gain, |S
21
|
2
vs. I
C
12
f = 2 GHz
10
V
CE
= 3 V
MAG [dB]
10
V
CE
= 1 V
V
CE
= 2 V
|S
21
| [dB]
8
V
CE
= 1 V
V
CE
= 2 V
2
8
6
6
4
4
0
5
10
15
20
25
30
35
2
0
5
10
15
20
25
30
35
I
C
[mA]
I
C
[mA]
www.tachyonics.co.kr
- 4/12 -
March-2006
Rev 1.0
DSP and ARM Processors
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