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MRF227

Description
silicon npn RF power transistor
File Size19KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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MRF227 Overview

silicon npn RF power transistor

MRF227
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION:
The
MRF227
is
designed for large signal power
amplifier applications operating to
225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
O
O
0.6 A
36 V
16 V
8 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
1 = EMITTER
2 = BASE
3 = COLLECTOR
O
O
O
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
H
FE
I
C
= 50 mA
I
C
= 50 mA
T
C
= 25 C
O
TRANS1.SYM
TEST CONDITIONS
MINIMUM
16
36
4.0
TYPICAL
MAXIMUM
UNITS
V
V
V
I
C
= 1.0 mA
V
CE
= 15 V
V
CE
= 5.0 V
I
C
= 100 mA
1.0
20
200
mA
---
C
OB
G
PE
η
V
CB
= 12.5 V
P
OUT
=
3.0 W V
CE
= 12.5 V
f = 1.0 MHz
f = 225 MHz
13.5
15
15
Pf
dB
P
OUT
=
3.0 W V
CE
= 12.5 V
f = 225 MHz
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. -
1/1
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