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SS12W_R2_10001

Description
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size117KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SS12W_R2_10001 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SS12W_R2_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionROHS COMPLIANT, PLASTIC, SMA, 2 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SS12W_R2_10001 Preview

Download Datasheet
SS12W SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
1.0 Ampere
VOLTAGE
20 to 100 Volts
CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss, high efficiency
• High surge capacity
• High current capacity, low V
F
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications.
• Lead free in comply with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: JEDEC SMA(W) molded plastic
• Terminals:Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.0023 ounce, 0.0679 gram
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
PA RA ME TE R
Ma xi mum Re curr e nt P e a k Re ve rs e Vo lta g e
Ma xi mum RMS Vo lta g e
Ma xi mum D C B lo ck i ng Vo lta g e
Ma xi mum A ve ra g e F o rwa rd C urre nt a t T
L
=7 5
O
C
P e a k F o rwa rd S ur g e C ur re nt : 8 .3 ms s i ng le ha lf s i ne - wa ve
s up e ri mp o s e d o n r a te d lo a d ( JE D E C me tho d )
Ma xi mum F o rwa rd Vo lta g e a t 1 A (No te 1 )
Ma xi mum D C Re ve rs e C urr e nt a t
Ra te d D C B lo ck i ng Vo lta g e
Typ i c a l The rma l Re s i sta nc e ( No te 2 )
T
J
=2 5
O
C
T
J
=1 0 0
O
C
S YMB OL
S S 1 2 W S S 1 3 W S S 1 4W S S 1 5 W S S 1 6 W S S 1 8 W S S 1 9 W S 1 00 W
UNITS
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θ
JL
R
θ
JA
T
J
T
S TG
- 5 5 to +1 2 5
0 .5
0 .5
50
28
88
- 5 5 to +1 5 0
-5 5 to +1 5 0
20
14
20
30
21
30
40
28
40
50
35
50
1
30
0 .7
0 .8 5
0 .5
20
60
42
60
80
56
80
90
63
90
100
70
100
V
V
V
A
A
V
mA
O
C /
W
C
C
Op e ra ti ng J uncti o n Te mp e ra ture Ra ng e
S to ra g e Te mp e ra ture Ra ng e
O
O
NOTES:
1.Pulse Test with PW =300µsec, 1% Duty Cycle.
2.Mounted on P.C. Board with 5.0mm
2
(.013mm thick) copper pad areas.
February 08,2012-REV.06
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