MX30KPA258AE3TR datasheet, PDF

MX30KPA258AE3TR: DescriptionTrans Voltage Suppressor Diode, 30000W, 258V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size138KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MX30KPA258AE3TR Overview

Trans Voltage Suppressor Diode, 30000W, 258V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	288.2 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.61 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	258 V
surface mount	NO
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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