IDT71V25761YSA183BG datasheet, PDF

IDT71V25761YSA183BG: DescriptionCache SRAM, 128KX36, 3.3ns, CMOS, PBGA119, BGA-119; Categorystorage storage; File Size510KB，23 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71V25761YSA183BG Overview

Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA119, BGA-119

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	BGA-119
Contacts	119
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	3.3 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	183 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
length	22 mm
memory density	4718592 bit
Memory IC Type	CACHE SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	119
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5,3.3 V
Certification status	Not Qualified
Maximum seat height	2.36 mm
Maximum standby current	0.03 A
Minimum standby current	3.14 V
Maximum slew rate	0.34 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm
Base Number Matches	1

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