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DAP209S

Description
0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size196KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DAP209S Overview

0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

DAP209S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PSIP-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PSIP-W3
Maximum non-repetitive peak forward current4 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

DAP209S Related Products

DAP209S DAN201 DAN209 DAN209S DAN215 DAP201 DAP209 DAP215
Description 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
package instruction R-PSIP-W3 R-PSIP-T3 O-PBCY-T3 R-PSIP-W3 R-PSIP-T3 R-PSIP-T3 O-PBCY-T3 R-PSIP-T3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
JESD-30 code R-PSIP-W3 R-PSIP-T3 O-PBCY-T3 R-PSIP-W3 R-PSIP-T3 R-PSIP-T3 O-PBCY-T3 R-PSIP-T3
Maximum non-repetitive peak forward current 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Number of components 2 2 2 2 2 2 2 2
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR ROUND RECTANGULAR
Package form IN-LINE IN-LINE CYLINDRICAL IN-LINE IN-LINE IN-LINE CYLINDRICAL IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V
Maximum reverse current 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE THROUGH-HOLE THROUGH-HOLE WIRE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE BOTTOM SINGLE SINGLE SINGLE BOTTOM SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker ROHM Semiconductor - - - ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor

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