0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | ROHM Semiconductor |
package instruction | R-PSIP-T3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | HIGH RELIABILITY |
Configuration | COMMON ANODE, 2 ELEMENTS |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.2 V |
JESD-30 code | R-PSIP-T3 |
Maximum non-repetitive peak forward current | 4 A |
Number of components | 2 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Maximum output current | 0.1 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum power dissipation | 0.2 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 80 V |
Maximum reverse current | 0.1 µA |
Maximum reverse recovery time | 0.004 µs |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
DAP201 | DAN201 | DAN209 | DAN209S | DAN215 | DAP209S | DAP209 | DAP215 | |
---|---|---|---|---|---|---|---|---|
Description | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 | 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
package instruction | R-PSIP-T3 | R-PSIP-T3 | O-PBCY-T3 | R-PSIP-W3 | R-PSIP-T3 | R-PSIP-W3 | O-PBCY-T3 | R-PSIP-T3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
Configuration | COMMON ANODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | O-PBCY-T3 | R-PSIP-W3 | R-PSIP-T3 | R-PSIP-W3 | O-PBCY-T3 | R-PSIP-T3 |
Maximum non-repetitive peak forward current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
Number of components | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Maximum output current | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR |
Package form | IN-LINE | IN-LINE | CYLINDRICAL | IN-LINE | IN-LINE | IN-LINE | CYLINDRICAL | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Maximum power dissipation | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
Maximum reverse current | 0.1 µA | 0.1 µA | 0.1 µA | 0.1 µA | 0.1 µA | 0.1 µA | 0.1 µA | 0.1 µA |
Maximum reverse recovery time | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | WIRE | THROUGH-HOLE | WIRE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | BOTTOM | SINGLE | SINGLE | SINGLE | BOTTOM | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Maker | ROHM Semiconductor | - | - | - | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |