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D2006UK

Description
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size14KB,2 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
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D2006UK Overview

2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET

D2006UK Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage65 V
Processing package descriptionROHS COMPLIANT, CERAMIC, DK, 5 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
structureCOMMON SOURCE, 2 ELEMENTS
Shell connectionSOURCE
Number of components2
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF POWER
highest frequency bandL BAND
TetraFET
D2006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
15W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
(4
pls)
F
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
PIN 4
DRAIN 1
GATE 2
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
70W
65V
±20V
3A
–65 to 150°C
200°C
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