BC636-16ZL1 datasheet, PDF - EEWORLD Datasheet

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BC636-16ZL1: DescriptionPNP medium power transistors; CategoryDiscrete semiconductor The transistor; File Size54KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC636-16ZL1 Overview

PNP medium power transistors

BC636-16ZL1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-92
package instruction	CASE 29-11, TO-226, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 29-11
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	EUROPEAN PART NUMBER
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

BC636-16ZL1 Related Products

	BC636-16ZL1	BC640ZL1	BC636ZL1	BC636-16	BC636TA	BC636TF	BC636TFR
Description	PNP medium power transistors	PNP medium power transistors	PNP medium power transistors	PNP medium power transistors	TRANS PNP 45V 1A TO-92	TRANS PNP 45V 1A TO-92	TRANS PNP 45V 1A TO-92
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	ON Semiconductor	-	-
package instruction	CASE 29-11, TO-226, 3 PIN	CASE 29-11, TO-226, 3 PIN	CASE 29-11, TO-226, 3 PIN	-	CYLINDRICAL, O-PBCY-T3	-	-
Manufacturer packaging code	CASE 29-11	CASE 29-11	CASE 29-11	-	135AR	-	-
Reach Compliance Code	_compli	_compli	_compli	-	compliant	-	-
ECCN code	EAR99	EAR99	EAR99	-	EAR99	-	-
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	-	1 A	-	-
Collector-emitter maximum voltage	45 V	80 V	45 V	-	45 V	-	-
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	-	-
Minimum DC current gain (hFE)	100	40	40	-	25	-	-
JEDEC-95 code	TO-92	TO-92	TO-92	-	TO-92	-	-
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-	O-PBCY-T3	-	-
JESD-609 code	e0	e0	e0	-	e3	-	-
Number of components	1	1	1	-	1	-	-
Number of terminals	3	3	3	-	3	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	-
Package shape	ROUND	ROUND	ROUND	-	ROUND	-	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	-	-
Polarity/channel type	PNP	PNP	PNP	-	PNP	-	-
Maximum power dissipation(Abs)	1.5 W	0.8 W	0.8 W	-	0.8 W	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	-
surface mount	NO	NO	NO	-	NO	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Matte Tin (Sn) - annealed	-	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	-	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	-	-
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	-	-
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	-	100 MHz	-	-

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