BC636ZL1 datasheet, PDF - EEWORLD Datasheet

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BC636ZL1: DescriptionPNP medium power transistors; CategoryDiscrete semiconductor The transistor; File Size54KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC636ZL1 Overview

PNP medium power transistors

BC636ZL1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-92
package instruction	CASE 29-11, TO-226, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 29-11
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	EUROPEAN PART NUMBER
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

BC636ZL1 Related Products

	BC636ZL1	BC640ZL1	BC636-16ZL1	BC636-16	BC636TA	BC636TF	BC636TFR
Description	PNP medium power transistors	PNP medium power transistors	PNP medium power transistors	PNP medium power transistors	TRANS PNP 45V 1A TO-92	TRANS PNP 45V 1A TO-92	TRANS PNP 45V 1A TO-92
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	ON Semiconductor	-	-
package instruction	CASE 29-11, TO-226, 3 PIN	CASE 29-11, TO-226, 3 PIN	CASE 29-11, TO-226, 3 PIN	-	CYLINDRICAL, O-PBCY-T3	-	-
Manufacturer packaging code	CASE 29-11	CASE 29-11	CASE 29-11	-	135AR	-	-
Reach Compliance Code	_compli	_compli	_compli	-	compliant	-	-
ECCN code	EAR99	EAR99	EAR99	-	EAR99	-	-
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	-	1 A	-	-
Collector-emitter maximum voltage	45 V	80 V	45 V	-	45 V	-	-
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	-	-
Minimum DC current gain (hFE)	40	40	100	-	25	-	-
JEDEC-95 code	TO-92	TO-92	TO-92	-	TO-92	-	-
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-	O-PBCY-T3	-	-
JESD-609 code	e0	e0	e0	-	e3	-	-
Number of components	1	1	1	-	1	-	-
Number of terminals	3	3	3	-	3	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	-
Package shape	ROUND	ROUND	ROUND	-	ROUND	-	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	-	-
Polarity/channel type	PNP	PNP	PNP	-	PNP	-	-
Maximum power dissipation(Abs)	0.8 W	0.8 W	1.5 W	-	0.8 W	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	-
surface mount	NO	NO	NO	-	NO	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Matte Tin (Sn) - annealed	-	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	-	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	-	-
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	-	-
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	-	100 MHz	-	-

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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