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BC640ZL1

Description
PNP medium power transistors
CategoryDiscrete semiconductor    The transistor   
File Size54KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

BC640ZL1 Overview

PNP medium power transistors

BC640ZL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time1 week
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

BC640ZL1 Related Products

BC640ZL1 BC636-16ZL1 BC636ZL1 BC636-16 BC636TA BC636TF BC636TFR
Description PNP medium power transistors PNP medium power transistors PNP medium power transistors PNP medium power transistors TRANS PNP 45V 1A TO-92 TRANS PNP 45V 1A TO-92 TRANS PNP 45V 1A TO-92
Maker ON Semiconductor ON Semiconductor ON Semiconductor - ON Semiconductor - -
package instruction CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN - CYLINDRICAL, O-PBCY-T3 - -
Manufacturer packaging code CASE 29-11 CASE 29-11 CASE 29-11 - 135AR - -
Reach Compliance Code _compli _compli _compli - compliant - -
ECCN code EAR99 EAR99 EAR99 - EAR99 - -
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A - 1 A - -
Collector-emitter maximum voltage 80 V 45 V 45 V - 45 V - -
Configuration SINGLE SINGLE SINGLE - SINGLE - -
Minimum DC current gain (hFE) 40 100 40 - 25 - -
JEDEC-95 code TO-92 TO-92 TO-92 - TO-92 - -
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 - -
JESD-609 code e0 e0 e0 - e3 - -
Number of components 1 1 1 - 1 - -
Number of terminals 3 3 3 - 3 - -
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - -
Package shape ROUND ROUND ROUND - ROUND - -
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL - -
Polarity/channel type PNP PNP PNP - PNP - -
Maximum power dissipation(Abs) 0.8 W 1.5 W 0.8 W - 0.8 W - -
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified - -
surface mount NO NO NO - NO - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Matte Tin (Sn) - annealed - -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE - -
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM - -
Transistor component materials SILICON SILICON SILICON - SILICON - -
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz - 100 MHz - -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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