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BC636TA

Description
TRANS PNP 45V 1A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size54KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC636TA Overview

TRANS PNP 45V 1A TO-92

BC636TA Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionCYLINDRICAL, O-PBCY-T3
Manufacturer packaging code135AR
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

BC636TA Related Products

BC636TA BC640ZL1 BC636-16ZL1 BC636ZL1 BC636-16 BC636TF BC636TFR
Description TRANS PNP 45V 1A TO-92 PNP medium power transistors PNP medium power transistors PNP medium power transistors PNP medium power transistors TRANS PNP 45V 1A TO-92 TRANS PNP 45V 1A TO-92
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor - - -
package instruction CYLINDRICAL, O-PBCY-T3 CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN - - -
Manufacturer packaging code 135AR CASE 29-11 CASE 29-11 CASE 29-11 - - -
Reach Compliance Code compliant _compli _compli _compli - - -
ECCN code EAR99 EAR99 EAR99 EAR99 - - -
Maximum collector current (IC) 1 A 0.5 A 0.5 A 0.5 A - - -
Collector-emitter maximum voltage 45 V 80 V 45 V 45 V - - -
Configuration SINGLE SINGLE SINGLE SINGLE - - -
Minimum DC current gain (hFE) 25 40 100 40 - - -
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 - - -
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 - - -
JESD-609 code e3 e0 e0 e0 - - -
Number of components 1 1 1 1 - - -
Number of terminals 3 3 3 3 - - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - -
Package shape ROUND ROUND ROUND ROUND - - -
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL - - -
Polarity/channel type PNP PNP PNP PNP - - -
Maximum power dissipation(Abs) 0.8 W 0.8 W 1.5 W 0.8 W - - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - - -
surface mount NO NO NO NO - - -
Terminal surface Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - - -
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM - - -
Transistor component materials SILICON SILICON SILICON SILICON - - -
Nominal transition frequency (fT) 100 MHz 150 MHz 150 MHz 150 MHz - - -
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