CMHD2003TR datasheet, PDF - EEWORLD Datasheet

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CMHD2003TR: DescriptionRectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size367KB，2 Pages; ManufacturerCentral Semiconductor

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CMHD2003TR Overview

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2

CMHD2003TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Maximum non-repetitive peak forward current	1 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	250 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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CMHD2003

SURFACE MOUNT

HIGH VOLTAGE SILICON

SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMHD2003 is a

Silicon Switching Diode, manufactured by the epitaxial

planar process, epoxy molded in a SOD-123 surface

mount package, designed for applications requiring

high voltage capability.

MARKING CODE: C03

SOD-123 CASE

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Continuous Forward Current

Average Rectified Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp<1.0s (TC=25°C)

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

IFRM

IFSM

TJ, Tstg

250

200

625

1.0

400

-65 to +150

312.5

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

trr

VR=200V

VR=200V, TC=100°C

IF=100mA

VR=0, f=1.0MHz

IF=IR=30mA, RL=100Ω, Rec. to 3.0mA

1.5

MAX

100

1.0

UNITS

μA

R5 (5-August 2010)

CMHD2003TR Related Products

	CMHD2003TR	CMHD2003TRLEADFREE	CMHD2003BK
Description	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2	Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2
Is it Rohs certified?	incompatible	conform to	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2
Contacts	2	2	2
Reach Compliance Code	unknown	compliant	_compli
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V
JESD-30 code	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2
Maximum non-repetitive peak forward current	1 A	1 A	1 A
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Maximum output current	0.2 A	0.2 A	0.2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.4 W	0.4 W	0.4 W
Maximum repetitive peak reverse voltage	250 V	250 V	250 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
JESD-609 code	e0	-	e0
Certification status	Not Qualified	-	Not Qualified
Terminal surface	TIN LEAD	-	TIN LEAD
Base Number Matches	1	1	-

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