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PG150_07

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size62KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PG150_07 Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15

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PG150~PG1510
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
VOLTAGE
FEATURES
1.0(25.4)MIN.
50 to 1000 Volts
CURRENT
1.5 Amperes
DO-15
Unit: inch(mm)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low leakage.
• In compliance with EU RoHS 2002/95/EC directives
.034(.86)
.028(.71)
.300(7.6)
MECHANICALDATA
• Case: Molded plastic, DO-15
• Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.015 ounce, 0.4 gram
.230(5.8)
.140(3.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz, Single phase, half wave,
For capacitive load, derate current by 20%
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 6 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 5 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL P G1 5 0 P G1 5 1 P G1 5 2 P G1 5 4
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
C
J
R
θ
J A
T
J
, T
S TG
50
35
50
100
70
100
200
140
200
400
280
400
1 .5
50
1 .1
5 .0
500
25
45
1.0(25.4)MIN.
.104(2.6)
P G1 5 6 P G1 5 8 P G1 5 1 0 U N IT S
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
pF
O
C / W
O
- 5 5 TO + 1 5 0
C
NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
STAD-FEB.23.2007
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