= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
Q
4
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
L
LOOP
DUT
0.25 I
RM
I
RM
V
R
RHRG7580
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
500
-
-
-
2.0
-
-
85
100
-
-
-
-
0.8
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RHRG7590
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
-
500
-
-
-
2.0
-
85
100
-
-
-
-
0.8
RHRG75100
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
-
-
500
-
-
-
2.0
85
100
-
-
-
-
0.8
UNITS
V
V
µA
µA
µA
µA
mA
mA
mA
mA
ns
ns
ns
ns
nC
pF
o
C/W
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
500
-
-
-
2.0
-
-
-
85
100
-
-
-
-
0.8
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
V
R
= 10V, I
F
= 0A
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
0
I
F
dI
F
dt
t
A
t
RR
t
B
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
2
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves
400
I
R
, REVERSE CURRENT (µA)
1000
+175
o
C
100
+100
o
C
I
F
, FORWARD CURRENT (A)
100
10
+100
o
C
+175
o
C
10
+25
o
C
1
0.1
+25
o
C
1
0
1
3
2
V
F
, FORWARD VOLTAGE (V)
4
5
0.01
0
200
400
600
800
1000
V
R
, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
T
C
= +25
o
C
100
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
300
250
t, RECOVERY TIMES (ns)
T
C
= +100
o
C
t, RECOVERY TIMES (ns)
80
t
RR
200
150
t
RR
60
t
A
40
t
B
t
B
100
50
0
t
A
20
0
1
10
I
F
, FORWARD CURRENT (A)
75
1
10
I
F
, FORWARD CURRENT (A)
75
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
T
C
= +175
o
C
500
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
I
F
(AV), AVERAGE FORWARD CURRENT (A)
75
t, RECOVERY TIMES (ns)
400
60
DC
45
SQ. WAVE
30
300
t
RR
200
t
B
100
t
A
15
0
0
25
1
10
I
F
, FORWARD CURRENT (A)
75
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
3
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves
800
C
J
, JUNCTION CAPACITANCE (pF)
700
600
500
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
(Continued)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
I V
V
DD
I
L
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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Source: 21st Century Business Herald
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