= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
Q
4
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
L
LOOP
DUT
0.25 I
RM
I
RM
V
R
RHRG7580
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
500
-
-
-
2.0
-
-
85
100
-
-
-
-
0.8
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RHRG7590
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
-
500
-
-
-
2.0
-
85
100
-
-
-
-
0.8
RHRG75100
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
-
-
-
500
-
-
-
2.0
85
100
-
-
-
-
0.8
UNITS
V
V
µA
µA
µA
µA
mA
mA
mA
mA
ns
ns
ns
ns
nC
pF
o
C/W
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
MAX
3.0
2.5
500
-
-
-
2.0
-
-
-
85
100
-
-
-
-
0.8
I
F
= 1A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
I
F
= 75A, dI
F
/dt = 100A/µs
V
R
= 10V, I
F
= 0A
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
0
I
F
dI
F
dt
t
A
t
RR
t
B
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
2
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves
400
I
R
, REVERSE CURRENT (µA)
1000
+175
o
C
100
+100
o
C
I
F
, FORWARD CURRENT (A)
100
10
+100
o
C
+175
o
C
10
+25
o
C
1
0.1
+25
o
C
1
0
1
3
2
V
F
, FORWARD VOLTAGE (V)
4
5
0.01
0
200
400
600
800
1000
V
R
, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
T
C
= +25
o
C
100
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
300
250
t, RECOVERY TIMES (ns)
T
C
= +100
o
C
t, RECOVERY TIMES (ns)
80
t
RR
200
150
t
RR
60
t
A
40
t
B
t
B
100
50
0
t
A
20
0
1
10
I
F
, FORWARD CURRENT (A)
75
1
10
I
F
, FORWARD CURRENT (A)
75
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
T
C
= +175
o
C
500
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
I
F
(AV), AVERAGE FORWARD CURRENT (A)
75
t, RECOVERY TIMES (ns)
400
60
DC
45
SQ. WAVE
30
300
t
RR
200
t
B
100
t
A
15
0
0
25
1
10
I
F
, FORWARD CURRENT (A)
75
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
3
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves
800
C
J
, JUNCTION CAPACITANCE (pF)
700
600
500
400
300
200
100
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
(Continued)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
AVL
/(V
AVL
- V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
Q
1
L
R
+
V
DD
130Ω
1MΩ
DUT
V
AVL
12V
Q
2
130Ω
CURRENT
SENSE
I V
V
DD
I
L
I
L
-
12V
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site