MSRTA30080(A) thru MSRTA300160(A)
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1600 V V
RRM
Heavy Three Tower Package
V
RRM
= 200 V - 1600 V
I
F
= 300 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive p
p
peak reverse voltage
g
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
MSRTA30080(A)
800
800
300
4400
-40 to 175
-40 to 175
MSRTA300120(A)
1200
1200
300
4400
-40 to 175
-40 to 175
MSRTA300160(A)
1600
1600
300
4400
-40 to 175
-40 to 175
Unit
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 300 A, T
j
= 25 °C
V
R
= 200 V, T
j
= 25 °C
V
R
= 200 V, T
j
= 150 °C
MSRTA30080(A)
1.2
25
1
0.18
MSRTA300120(A)
1.2
25
1
0.18
MSRTA300160(A)
1.2
25
1
0.18
Unit
V
μA
mA
°C/W
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
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