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FR6AR02

Description
rectifiers 50v 6A rev leads fast recovery
CategoryDiscrete semiconductor    diode   
File Size519KB,2 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR6AR02 Overview

rectifiers 50v 6A rev leads fast recovery

FR6AR02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompli
applicationFAST RECOVERY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current135 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage50 V
Maximum reverse current25 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
FR6A02 thru FR6JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V
RRM
DO-4 Package
V
RRM
= 50 V - 600 V
I
F
= 6 A
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
50
35
50
6
135
-65 to 150
-65 to 175
100
70
100
6
135
-65 to 150
-65 to 175
200
140
200
6
135
-65 to 150
-65 to 175
400
280
400
6
135
-65 to 150
-65 to 175
600
420
600
6
135
-65 to 150
-65 to 175
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 6 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
200
250
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.5
2.5
2.5
2.5
2.5
°C/W
www.genesicsemi.com/index.php/silicon-products/fast-rec
1

FR6AR02 Related Products

FR6AR02 FR6BR02 FR6GR02
Description rectifiers 50v 6A rev leads fast recovery rectifiers 100v 6A rev leads fast recovery rectifiers 400v 6A rev leads fast recovery
Is it lead-free? Lead free Lead free Lead free
Maker GeneSiC GeneSiC GeneSiC
package instruction O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Reach Compliance Code compli compli compli
application FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ANODE ANODE ANODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V 1.4 V
JEDEC-95 code DO-203AA DO-203AA DO-203AA
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 135 A 135 A 135 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 6 A 6 A 6 A
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 50 V 100 V 400 V
Maximum reverse current 25 µA 25 µA 25 µA
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER
ECCN code - EAR99 EAR99
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