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BAT54C

Description
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size85KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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BAT54C Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

0.2 A, 30 V, 2 组成, 硅, 信号二极管

BAT54C Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2250 W
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A

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Download Datasheet
BAT54 / A / C / S
SCHOTTKY DIODES
BAT54
BAT54A
BAT54C
BAT54S
Marking Code:
L4
Marking Code:
L42
Marking Code:
L43
Marking Code:
L44
BAT54
3
BAT54S
3
BAT54C
3
BAT54A
3
1
2
1
2
1
2
1
2
Absolute Maximum Ratings
1)
(T
a
= 25
O
C)
Parameter
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak forward surge current
at Pulse width=1.0 second
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Symbol
V
RRM
I
F(AV)
I
FSM
P
tot
R
θJA
T
j
T
S
Limits
30
200
600
290
430
-55 to +150
-55 to +150
Unit
V
mA
mA
mW
O
C/W
O
C
C
O
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Characteristics at T
a
= 25
O
C
Parameter
Forward voltage
at I
F
= 0.1mA
at I
F
= 1mA
at I
F
= 10mA
at I
F
= 30mA
at I
F
= 100mA
Reverse current
at V
R
= 25V
Breakdown voltage
at I
R
=10μA
Total capacitance
at V
R
= 1V, f = 1MHz
Reverse recovery time
at I
F
= 10mA, I
R
= 10mA, I
RR
= 1mA,
R
L
= 100Ω
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
V
R
C
tot
t
rr
Min.
-
-
-
-
-
-
30
-
-
Max.
240
320
400
500
1000
2
-
10
5
Unit
mV
mV
mV
mV
mV
μA
V
pF
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