US1M datasheet, PDF - EEWORLD Datasheet

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US1M: Description1 A, 1000 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size95KB，2 Pages; ManufacturerYFWDIODE; Websitehttp://www.yfwdiode.com/

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US1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE

US1M Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, SMA, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0750 us
Maximum repetitive peak reverse voltage	1000 V
Maximum average forward current	1 A

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(US1A~US1M) SMA

High Efficiency Recovery rectifiers

Major Ratings and Characteristics

1.0 A

F(AV)

RRM

50 V to 1000 V

FSM

30 A

50 nS , 75 nS

1.0 V , 1.3 V , 1.7 V

max.

150 °C

Features

Low profile package

Ideal for automated placement

Glass passivated chip junction

Ultrafast reverse recovery time

Low switching losses, high efficiency

High forward surge capability

High temperatrue soldering

260 /10 seconds at terminals

Component in accordance to

RoHS 2002/95/1 and WEEE 2002/96/EC

Mechanical Date

Case: JEDEC DO-214AC molded plastic

body over passivated chip

Terminals: Solder plated, solderable per

J-STD-002B and JESD22-B102D

Polarity: Laser band denotes cathode end

Maximum Ratings & Thermal Characteristics & Electrical Characteristics

(TA = 25 °C unless otherwise noted)

Symbol (US1A) (US1B) (US1D) (US1G) (US1J) (US1K) (US1M) UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Maximum instantaneous forwad voltage at 1.0A

Maximum DC reverse current

at Rated DC blocking voltage

= 25

= 100

RRM

RMS

F(AV)

FSM

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

1.0

1.3

5.0

–55 to +150

1.7

μA

Maximum reverse recovery time

at I

= 0.5 A , I

= 1.0 A , I

= 0.25 A

Typical junction capacitance at 4.0 V ,1MHz

Thermal resistance from junction to ambient

Operating junction and storage

temperature range

, T

STG

US1M Related Products

	US1M	US1G	US1J	US1K	US1D	US1B	US1A-SMA
Description	1 A, 1000 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

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