(US1A~US1M) SMA
High Efficiency Recovery rectifiers
Major Ratings and Characteristics
1.0 A
I
F(AV)
V
RRM
50 V to 1000 V
I
FSM
30 A
t
rr
50 nS , 75 nS
V
F
1.0 V , 1.3 V , 1.7 V
T
j
max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
High temperatrue soldering
260 /10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214AC molded plastic
body over passivated chip
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Symbol (US1A) (US1B) (US1D) (US1G) (US1J) (US1K) (US1M) UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
at Rated DC blocking voltage
T
A
= 25
T
A
= 100
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
50
35
50
100
70
100
200
140
200
400
280
400
1
30
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
1.0
1.3
5.0
50
50
15
75
–55 to +150
1.7
V
μA
μA
Maximum reverse recovery time
at I
F
= 0.5 A , I
R
= 1.0 A , I
rr
= 0.25 A
Typical junction capacitance at 4.0 V ,1MHz
Thermal resistance from junction to ambient
Operating junction and storage
temperature range
75
10
nS
pF
/W
T
J
, T
STG
Wireless Connectivity
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