V826764B24SAIW-C0 datasheet, PDF

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V826764B24SAIW-C0: DescriptionDDR DRAM Module, 64MX64, 0.75ns, CMOS, GREEN, SODIMM-200; Categorystorage storage; File Size201KB，14 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V826764B24SAIW-C0 Overview

DDR DRAM Module, 64MX64, 0.75ns, CMOS, GREEN, SODIMM-200

V826764B24SAIW-C0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1656790126
Parts packaging code	SODIMM
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-XZMA-N200
JESD-609 code	e4
memory density	4294967296 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum slew rate	2.64 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	NOT SPECIFIED

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V826764B24SA

512 MB 200-PIN DDR UNBUFFERED SODIMM

64M x 64

Features

■

JEDEC 200 Pin DDR Unbuffered Small-Outline,

Dual In-Line memory module (SODIMM);

67,108,864 x 64 bit organization.

■

Utilizes High Performance 32M x 16 DDR

SDRAM in TSOP-II Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

DDR SDRAM Performance

Component Used -6

-7

Module Speed

-75

-8

Description

The V826764B24SA memory module is

organized 67,108,864 x 64 bits in a 200 pin memory

module. The 64M x 64 memory module uses 8

ProMOS 32M x 16 DDR SDRAM. The x64 modules

are ideal for use in high performance computer

systems where increased memory density and fast

access times are required.

Clock Frequency

166

143

133

125

(PC333) (PC266A) (PC266B) (PC200)

200

(max.) Clock Frequency (max.)

(PC400B)

166

(PC333)

Units

MHz

CLK

Clock Access Time

7.5

Clock = 2.5

CAS LatencyCycle Time CAS Latency = 2

Clock Cycle Time CAS Latency = 2.5

Clock Cycle Time CAS Latency = 3

RCD

tRCD parameter

tRP parameter

7.5

V826764B24SA Rev. 1.0 April 2005

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Description	DDR DRAM Module, 64MX64, 0.75ns, CMOS, GREEN, SODIMM-200	DDR DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.65ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.65ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.65ns, CMOS, PDMA200
Objectid	1656790126	1125506457	1125506458	1125506459	1125506463	1125506464	1125506465	1125506468
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	0.75 ns	0.7 ns	0.65 ns	0.7 ns	0.7 ns	0.65 ns	0.7 ns	0.65 ns
Maximum clock frequency (fCLK)	166 MHz	166 MHz	200 MHz	166 MHz	166 MHz	200 MHz	166 MHz	200 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XZMA-N200	R-PDMA-N200	R-PDMA-N200	R-PDMA-N200	R-PDMA-N200	R-PDMA-N200	R-PDMA-N200	R-PDMA-N200
memory density	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64	64	64
Number of terminals	200	200	200	200	200	200	200	200
word count	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000	64000000	64000000	64000000	64000000	64000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	2.5 V	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V	2.5 V	2.6 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192
Maximum slew rate	2.64 mA	2.64 mA	2.92 mA	2.64 mA	2.64 mA	2.92 mA	2.64 mA	2.92 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V	2.5 V	2.6 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	ZIG-ZAG	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Is it lead-free?	Lead free	-	-	-	Lead free	Lead free	Contains lead	Contains lead
Is it Rohs certified?	conform to	-	-	-	conform to	conform to	incompatible	incompatible
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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