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SLD342YT-2

Description
2W High Power Laser Diode
CategoryLED optoelectronic/LED    photoelectric   
File Size57KB,3 Pages
ManufacturerSONY
Websitehttp://www.sony.co.jp
Download Datasheet Parametric Compare View All

SLD342YT-2 Overview

2W High Power Laser Diode

SLD342YT-2 Parametric

Parameter NameAttribute value
MakerSONY
package instructionM-288, 9 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Maximum forward current3.5 A
Maximum forward voltage3 V
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature30 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
Nominal output power2000 mW
peak wavelength810 nm
Semiconductor materialAlGaAs
shapeROUND
size5 mm
surface mountNO
Maximum threshold current1000 mA
Base Number Matches1
SLD342YT
2W High Power Laser Diode
Description
The SLD342YT has a compatible package, and
allows independent thermal and electric design.
It is a high power laser diode that affords easy
optical design.
Features
• High-optical power output
Recommended optical power output: P
O
= 2.0W
• High-optical power density: 2W/100µm
(Emitting line width)
Applications
• Solid state laser excitation
• Medical use
• Material processing
• Measurement
Structure
AlGaAs quantum well structure laser diode
Operating Lifetime
MTTF 10,000H (effective value)
at Po = 2.0W, Tth = 25°C
Absolute Maximum Ratings
(Tth = 25°C)
Optical power output
P
O
2.2
W
Reverse voltage
V
R
LD
2
V
PD 15
V
Operating temperature (Tth) Topr –10 to +30 °C
Storage temperature
Tstg –40 to +85 °C
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
1
3
4
5
6
7
8
9
10
Case
LD
TH
PD
Preliminary
M-288
Equivalent Circuit
TE Cooler
Pin Configuration
(Top View)
No.
1
2
3
4
5
6
7
8
9
10
Case
Laser diode (anode)
Thermistor
Thermistor
Laser diode (cathode)
Photo diode (anode)
Photo diode (cathode)
TE cooler (positive)
Function
TE cooler (negative)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE00197-PS

SLD342YT-2 Related Products

SLD342YT-2 SLD342YT-3 SLD342YT-25 SLD342YT-24 SLD342YT-21 SLD342YT-1 SLD342YT
Description 2W High Power Laser Diode 2W High Power Laser Diode 2W High Power Laser Diode 2W High Power Laser Diode 2W High Power Laser Diode 2W High Power Laser Diode 2W High Power Laser Diode
Maker SONY SONY SONY SONY SONY SONY SONY
package instruction M-288, 9 PIN M-288, 9 PIN M-288, 9 PIN M-288, 9 PIN M-288, 9 PIN M-288, 9 PIN M-288, 9 PIN
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions 1 1 1 1 1 1 1
Maximum operating temperature 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C
Minimum operating temperature -10 °C -10 °C -10 °C -10 °C -10 °C -10 °C -10 °C
Optoelectronic device types LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE
Nominal output power 2000 mW 2000 mW 2000 mW 2000 mW 2000 mW 2000 mW 2000 mW
peak wavelength 810 nm 830 nm 810 nm 807 nm 798 nm 795 nm 790 nm
shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
size 5 mm 5 mm 5 mm 5 mm 5 mm 5 mm 5 mm
Maximum threshold current 1000 mA 1000 mA 1000 mA 1000 mA 1000 mA 1000 mA 1000 mA
Maximum forward current 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A -
Maximum forward voltage 3 V 3 V 3 V 3 V 3 V 3 V -
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT -
Semiconductor material AlGaAs AlGaAs AlGaAs AlGaAs AlGaAs AlGaAs -
surface mount NO NO NO NO NO NO -
Base Number Matches 1 - 1 1 1 1 1
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