SLD342YT-3 datasheet, PDF - EEWORLD Datasheet

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SLD342YT-3: Description2W High Power Laser Diode; CategoryLED optoelectronic/LED photoelectric; File Size57KB，3 Pages; ManufacturerSONY; Websitehttp://www.sony.co.jp

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SLD342YT-3 Overview

2W High Power Laser Diode

SLD342YT-3 Parametric

Parameter Name	Attribute value
Maker	SONY
package instruction	M-288, 9 PIN
Reach Compliance Code	unknow
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Maximum forward current	3.5 A
Maximum forward voltage	3 V
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	30 °C
Minimum operating temperature	-10 °C
Optoelectronic device types	LASER DIODE
Nominal output power	2000 mW
peak wavelength	830 nm
Semiconductor material	AlGaAs
shape	ROUND
size	5 mm
surface mount	NO
Maximum threshold current	1000 mA

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SLD342YT

2W High Power Laser Diode

Description

The SLD342YT has a compatible package, and

allows independent thermal and electric design.

It is a high power laser diode that affords easy

optical design.

Features

• High-optical power output

Recommended optical power output: P

= 2.0W

• High-optical power density: 2W/100µm

(Emitting line width)

Applications

• Solid state laser excitation

• Medical use

• Material processing

• Measurement

Structure

AlGaAs quantum well structure laser diode

Operating Lifetime

MTTF 10,000H (effective value)

at Po = 2.0W, Tth = 25°C

Absolute Maximum Ratings

(Tth = 25°C)

•

Optical power output

2.2

•

Reverse voltage

PD 15

•

Operating temperature (Tth) Topr –10 to +30 °C

•

Storage temperature

Tstg –40 to +85 °C

Warranty

This warranty period shall be 90 days after receipt of the product or

1,000 hours operation time whichever is shorter.

Sony Quality Assurance Department shall analyze any product that

fails during said warranty period, and if the analysis results show

that the product failed due to material or manufacturing defects on

the part of Sony, the product shall be replaced free of charge.

Laser diodes naturally have differing lifetimes which follow a Weibull

distribution.

Special warranties are also available.

Case

Preliminary

M-288

Equivalent Circuit

TE Cooler

Pin Configuration

(Top View)

No.

Case

Laser diode (anode)

Thermistor

Laser diode (cathode)

Photo diode (anode)

Photo diode (cathode)

TE cooler (positive)

Function

TE cooler (negative)

—

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

PE00197-PS

SLD342YT-3 Related Products

	SLD342YT-3	SLD342YT-25	SLD342YT-24	SLD342YT-21	SLD342YT-2	SLD342YT-1	SLD342YT
Description	2W High Power Laser Diode	2W High Power Laser Diode	2W High Power Laser Diode	2W High Power Laser Diode	2W High Power Laser Diode	2W High Power Laser Diode	2W High Power Laser Diode
Maker	SONY	SONY	SONY	SONY	SONY	SONY	SONY
package instruction	M-288, 9 PIN	M-288, 9 PIN	M-288, 9 PIN	M-288, 9 PIN	M-288, 9 PIN	M-288, 9 PIN	M-288, 9 PIN
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER	SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER
Number of functions	1	1	1	1	1	1	1
Maximum operating temperature	30 °C	30 °C	30 °C	30 °C	30 °C	30 °C	30 °C
Minimum operating temperature	-10 °C	-10 °C	-10 °C	-10 °C	-10 °C	-10 °C	-10 °C
Optoelectronic device types	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE
Nominal output power	2000 mW	2000 mW	2000 mW	2000 mW	2000 mW	2000 mW	2000 mW
peak wavelength	830 nm	810 nm	807 nm	798 nm	810 nm	795 nm	790 nm
shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
size	5 mm	5 mm	5 mm	5 mm	5 mm	5 mm	5 mm
Maximum threshold current	1000 mA	1000 mA	1000 mA	1000 mA	1000 mA	1000 mA	1000 mA
Maximum forward current	3.5 A	3.5 A	3.5 A	3.5 A	3.5 A	3.5 A	-
Maximum forward voltage	3 V	3 V	3 V	3 V	3 V	3 V	-
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	-
Semiconductor material	AlGaAs	AlGaAs	AlGaAs	AlGaAs	AlGaAs	AlGaAs	-
surface mount	NO	NO	NO	NO	NO	NO	-
Base Number Matches	-	1	1	1	1	1	1

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