UNISONIC TECHNOLOGIES CO., LTD
4N60Z-E
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N60Z-E
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
FEATURES
* R
DS(ON)
=2.5Ω @ V
GS
=10V, I
D
=2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
4N60ZL-TF1-T
4N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A22. A
4N60Z-E
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
200
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy Single
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
36
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 30mH, I
AS
= 3.65A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
3.47
UNIT
°С/W
°С/W
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A22. A
4N60Z-E
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
600
V
V
DS
= 600V, V
GS
= 0V
10
μA
5
μA
Forward
V
GS
= 20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
-5
μA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
2.0 2.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
550 680 pF
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Output Capacitance
C
OSS
60
80
pF
Reverse Transfer Capacitance
C
RSS
12.5 16
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
50
70
ns
Turn-On Rise Time
t
R
260 280 ns
V
DD
=30V, V
GS
=0~10V, I
D
=0.5A
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
145 160 ns
Turn-Off Fall Time
t
F
300 320 ns
60
80
nC
Total Gate Charge
Q
G
V
DD
= 50V, V
DS
=10V, I
D
= 1.3A,
I
G
= 100μA, V
GS
= 10V
Gate-Source Charge
Q
GS
15
nC
(Note 1, 2)
Gate-Drain Charge
Q
GD
18
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
4.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6 A
Forward Current
250
ns
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
1.5
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-A22. A
4N60Z-E
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-A22. A
4N60Z-E
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A22. A
京公网安备 11010802033920号
EEWORLD
