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ES1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size34KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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ES1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE

ES1D Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0200 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current1 A

ES1D Related Products

ES1D ES1A ES1B ES1C ES1E ES1G ES1J
Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2 2 - 2 2
Number of components 1 1 1 1 - 1 1
Processing package description Plastic, SMA, 2 PIN Plastic, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN SMA, 2 PIN - Plastic, HSMA, 2 PIN SMA, 2 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE - DISCONTINUED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle RECTANGULAR - Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes - Yes Yes
Terminal form C BEND C BEND C BEND C BEND - C BEND C BEND
terminal coating PURE Tin - PURE Tin MATTE TIN - tin lead NOT SPECIFIED
Terminal location pair pair pair DUAL - pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY - Plastic/Epoxy Plastic/Epoxy
structure single single single SINGLE - single single
Diode component materials silicon silicon silicon SILICON - silicon silicon
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE - Signal diode Signal diode
Maximum reverse recovery time 0.0200 us 0.0200 us 0.0350 us 0.0150 us - 0.0600 us 0.0600 us
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 150 V - 400 V 600 V
Maximum average forward current 1 A 1 A 1 A 1 A - 1 A 1 A

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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