ES1E datasheet, PDF - EEWORLD Datasheet

ES1E: Description1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size34KB，2 Pages; ManufacturerYEA SHIN TECHNOLOGY CO.,LTD; Websitehttp://www.yeashin.com/

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ES1E Overview

1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC

	ES1E	ES1A	ES1B	ES1C	ES1D	ES1G	ES1J
Description	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	-	2	2	2	2	2	2
Number of components	-	1	1	1	1	1	1
Processing package description	-	Plastic, SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, HSMA, 2 PIN	SMA, 2 PIN
state	-	ACTIVE	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	TRANSFERRED
packaging shape	-	Rectangle	Rectangle	RECTANGULAR	Rectangle	Rectangle	Rectangle
Package Size	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	-	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	-	pair	pair	DUAL	pair	pair	pair
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	-	single	single	SINGLE	single	single	single
Diode component materials	-	silicon	silicon	SILICON	silicon	silicon	silicon
Diode type	-	Signal diode	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	Signal diode
Maximum reverse recovery time	-	0.0200 us	0.0350 us	0.0150 us	0.0200 us	0.0600 us	0.0600 us
Maximum repetitive peak reverse voltage	-	50 V	100 V	150 V	200 V	400 V	600 V
Maximum average forward current	-	1 A	1 A	1 A	1 A	1 A	1 A
terminal coating	-	-	PURE Tin	MATTE TIN	PURE Tin	tin lead	NOT SPECIFIED

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