RVF40 datasheet, PDF - EEWORLD Datasheet

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RVF40: Description0.4 A, 40000 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size42KB，2 Pages; ManufacturerEDI [Electronic devices inc.]

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RVF40 Overview

0.4 A, 40000 V, SILICON, SIGNAL DIODE

RVF40 Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
package instruction	R-PDIP-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	60 V
JESD-30 code	R-PDIP-W2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.4 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40000 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	DUAL

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RVF

FAST RECOVERY - HIGH VOLTAGE

HIGH CURRENT SILICON RECTIFIERS

MATCHED SILICON RECTIFIER ELEMENTS

DIFFUSED SILICON JUNCTIONS

PRV 5,000 TO 40,000 VOLTS

AVALANCHE CHARACTERISTICS

LOW LEAKAGE

EDI Type No.

Peak

Reverse Voltage

PRV (V olts)

5,000

8,000

10,000

12,500

15,000

20,000

25,000

30,000

40,000

Average Rectified

Current

@55

C@100

Amps

0.50

0.40

0.33

0.27

Max. Fwd Voltage

@25 C

=0.5 ADC

(Volts)

Length L

Fig.3

Inches

1.25

1.75

2.00

2.50

3.00

4.00

4.50

5.50

7.00

31.75

44.45

50.80

63.50

76.20

101.60

114.30

139.70

177.80

RVF5

RVF8

RVF10

RVF12.5

RVF15

RVF20

RVF25

RVF30

RVF40

ELECTRICAL CHARACTERISTICS(at T

=25 C Unless Otherwise Specified)

Max. DC Reverse Current @ PRV and 25 C, I

Max. DC Reverse Current @ PRV and 100 C, I

Ambient Operating Temperature Range,T

0.1

-55

C to +150

-55

C to +150

Amps

150 nanoseconds

Storage Temperature Range, T

STG

Max.One-Half Cycle Surge Current, I

(Surge )@ 60Hz

Forward Voltage Repetitive Peak,I

FRM

Max. Reverse Recovery Time , T

(Fig.4)

EDI reserves the right to change these specifications at any time without notice.

RVF40 Related Products

	RVF40	RVF20	RVF25	RVF30
Description	0.4 A, 40000 V, SILICON, SIGNAL DIODE	0.4 A, 20000 V, SILICON, SIGNAL DIODE	0.4 A, 25000 V, SILICON, SIGNAL DIODE	0.4 A, 30000 V, SILICON, SIGNAL DIODE
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
package instruction	R-PDIP-W2	R-PDIP-W2	R-PDIP-W2	R-PDIP-W2
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	60 V	30 V	38 V	45 V
JESD-30 code	R-PDIP-W2	R-PDIP-W2	R-PDIP-W2	R-PDIP-W2
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	0.4 A	0.4 A	0.4 A	0.4 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	40000 V	40000 V	25000 V	30000 V
Maximum reverse recovery time	0.15 µs	0.15 µs	0.15 µs	0.15 µs
surface mount	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	DUAL	DUAL	DUAL	DUAL

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