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RVF25

Description
0.4 A, 25000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size42KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric Compare View All

RVF25 Overview

0.4 A, 25000 V, SILICON, SIGNAL DIODE

RVF25 Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionR-PDIP-W2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)38 V
JESD-30 codeR-PDIP-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage25000 V
Maximum reverse recovery time0.15 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationDUAL
RVF
FAST RECOVERY - HIGH VOLTAGE
HIGH CURRENT SILICON RECTIFIERS
MATCHED SILICON RECTIFIER ELEMENTS
DIFFUSED SILICON JUNCTIONS
PRV 5,000 TO 40,000 VOLTS
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI Type No.
Peak
Reverse Voltage
PRV (V olts)
5,000
8,000
10,000
12,500
15,000
20,000
25,000
30,000
40,000
Average Rectified
Current
@55
o
C@100
o
C
Amps
0.50
0.50
0.50
0.50
0.50
0.40
0.40
0.40
0.40
0.33
0.33
0.33
0.33
0.33
0.27
0.27
0.27
0.27
Max. Fwd Voltage
@25 C
I
F
=0.5 ADC
(Volts)
9
12
15
20
23
30
38
45
60
o
Length L
Fig.3
Inches
MM
1.25
1.75
2.00
2.50
3.00
4.00
4.50
5.50
7.00
31.75
44.45
50.80
63.50
76.20
101.60
114.30
139.70
177.80
RVF5
RVF8
RVF10
RVF12.5
RVF15
RVF20
RVF25
RVF30
RVF40
ELECTRICAL CHARACTERISTICS(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
o
0.1
A
15
A
-55
o
C to +150
o
C
-55
o
C to +150
o
C
50
Amps
2
Amps
150 nanoseconds
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Voltage Repetitive Peak,I
FRM
Max. Reverse Recovery Time , T
rr
(Fig.4)
EDI reserves the right to change these specifications at any time without notice.

RVF25 Related Products

RVF25 RVF20 RVF30 RVF40
Description 0.4 A, 25000 V, SILICON, SIGNAL DIODE 0.4 A, 20000 V, SILICON, SIGNAL DIODE 0.4 A, 30000 V, SILICON, SIGNAL DIODE 0.4 A, 40000 V, SILICON, SIGNAL DIODE
Maker EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.]
package instruction R-PDIP-W2 R-PDIP-W2 R-PDIP-W2 R-PDIP-W2
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 38 V 30 V 45 V 60 V
JESD-30 code R-PDIP-W2 R-PDIP-W2 R-PDIP-W2 R-PDIP-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 0.4 A 0.4 A 0.4 A 0.4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 25000 V 40000 V 30000 V 40000 V
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs
surface mount NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE
Terminal location DUAL DUAL DUAL DUAL
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