RL205-G datasheet, PDF - EEWORLD Datasheet

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RL205-G: Description2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15; CategoryDiscrete semiconductor diode; File Size69KB，3 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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RL205-G Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15

RL205-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
package instruction	O-PALF-W2
Reach Compliance Code	compli
Other features	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	60 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	5 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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General Purpose Silicon Rectifier

RL201-G Thru. RL207-G

Forward Current: 2.0A

Reverse Voltage: 50 to 1000V

RoHS Device

DO-15

Features

-Diffused Junction.

-Low forward voltage drop.

-Low reverse leakage current.

-High current capability.

0.300(7.6)

0.228(5.8)

1.000(25.40) Min.

Mechanical data

-Case: JEDEC DO-15 molded plastic.

-Epoxy: UL94V-0 rate flame retardant

-Polarity: Color band denotes cathode end

Mounting position: Any

-Weight: 0.39gram

0.141(3.6) DIA.

0.102(2.6) DIA.

1.000(25.40) Min.

0.035(0.9) DIA.

0.028(0.7) DIA.

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Parameter

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375"(9.5mm) lead length @T

=50°C

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

Maximum forward voltage at 2.0A DC

Maximum reverse current

at rated DC blocking voltage

=25°C

=100°C

Symbol

RRM

RMS

(AV)

RL201-G

RL202-G

100

RL203-G

200

140

200

RL204-G

400

280

400

2.0

RL205-G

600

420

600

RL206-G

800

560

800

RL207-G

1000

700

1000

Unit

FSM

θJA

STG

1.1

-55 ~ +150

μA

°C/W

°C

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

Operating temperature range

Storage temperature range

NOTES:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance junction to ambient.

Company reserves the right to improve product design , functions and reliability without notice.

QW-BG011

REV:B

Page 1

Comchip Technology CO., LTD.

RL205-G Related Products

	RL205-G	RL202-G	RL203-G	RL204-G	RL206-G	RL207-G	RL201-G
Description	2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	DO-15	DO-15	DO-15	DO-15	DO-15	DO-15	DO-15
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	60 A	60 A	60 A	60 A	60 A	60 A	60 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	100 V	200 V	400 V	800 V	1000 V	50 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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