WS512K32N-17H2M datasheet, PDF

WS512K32N-17H2M: DescriptionSRAM Module, 2MX8, 17ns, CMOS, CPGA66, 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, HIP-66; Categorystorage storage; File Size270KB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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WS512K32N-17H2M Overview

SRAM Module, 2MX8, 17ns, CMOS, CPGA66, 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, HIP-66

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, HIP-66
Reach Compliance Code	unknown
Maximum access time	17 ns
Other features	CONFIGURABLE AS 512K X 32
I/O type	COMMON
JESD-30 code	S-CPGA-P66
JESD-609 code	e0
length	35.2 mm
memory density	16777216 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	66
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2MX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	PGA
Encapsulate equivalent code	PGA66,11X11
Package shape	SQUARE
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.7 mm
Maximum standby current	0.028 A
Minimum standby current	2 V
Maximum slew rate	0.54 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	PERPENDICULAR
width	35.2 mm

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